Collapse effect of field-effect transistors in power applications 2

Evaluation method: Safe operating range of single pulse UIS (Unconstrained Inductive Switching)

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Collapse effect of field-effect transistors in power applications 3

When the field-effect transistor enters the breakdown effect,

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Collapse effect of field-effect transistors in power applications 4

Generally speaking, if the voltage of Drain and Source exceeds the maximum rated voltage specified in the specifications by a slightly larger amount,

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Collapse effe5ct of field-effect transistors in power applications 5

But even if this abnormal peak voltage did not trigger the component to collapse,

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Collapse effe5ct of field-effect transistors in power applications 6

This pulse has such a high power, but the resulting temperature change is only 3 ℃.

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Collapse effe5ct of field-effect transistors in power applications 7

In the exported formula (3), it can also be applied to continuous forms of pulses. Formula (3) can be modified as follows to obtain its instantaneous thermal resistance:

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